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millwood的三处发言很中肯,我把它配上中文一并贴在这里。
D1/D2 is used to bias the idle current in Q1/Q2: Idle current = (Vfwd1 + Vfwd2 - Vbe1 - vbe2) / (R3 + R4).
D1/D2被用来偏置Q1/Q2的静态电流=(Vfwd1 + Vfwd2 - Vbe1 - vbe2) / (R3 + R4).
if you reduce the value of those two resistor, you increase the current going through the diodes, thus increasing the voltage drop over the two diodes -> increasing idle current in Q1/Q2.
如果你降低这两个电阻的阻值,你就升高通过两个二极管的电流,结果两个二极管的压降)增加Q1和Q2电流
if Q1/Q2 is under-biased, you would reduce its cross-over distortion.
如Q1/Q2是低偏置的,你将降低交越失真。
if Q1/Q2 is properly biased, you would increase its distortion through gm-doubling.
如Q1/Q2是合适偏置的,你将通过倍增跨导而增加它的失真。
in general, you want to bias Q1/Q2 so that the voltage drop on the Re resistors is about 25mv each. in this case, that means a bias current of about 1.2ma.
一般来说,你想要偏置Q1/Q2以便降落在Re电阻的压降大约各自25mv。在这例子,那就意味偏置电流大约1.2mA。
not exactly.
不够准确。
when the input signal approaches its positive peak, the voltage drop over the top resistor R6 approaches its minimal, thus the current sourced by R6 approaches its minimal -> R6 has the least capability to drive the output transistor Q1.
当输入信号到达它的峰值,电压降落在上电阻R6到达它的极小值,这样由R6而来的电流到达它的极小值
〉R6有最小的潜力驱动输出晶体管Q1。
Unfortunately, that's precisely when the voltage across the load approaches its maximum -> Q1's Ic approaches its maximum and Q1 needs the most Ib.
不幸的是,那是正好在通过负载的电压到达它的最大值〉Q1的Ic到达它的最大值这时Q1需要最多的Ib。
the same thing happens on the negative cycle as well.
同样的事件一样发生在负半周。 |
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